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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 46 64 Single D FEATURES 600 0.27 * Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Requirements Available * Lower Gate Charge Results in Simple Drive RoHS* COMPLIANT * Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available TO-247 APPLICATIONS * Zero Voltage Switching SMPS G S D G S N-Channel MOSFET * Telecom and Server Power Supplies * Uniterruptible Power Supplies * Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP21N60LPbF SiHFP21N60L-E3 IRFP21N60L SiHFP21N60L ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 21 13 84 2.6 420 21 33 330 16 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.9 mH, RG = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a). c. ISD 21 A, dI/dt 530 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 1 IRFP21N60L, SiHFP21N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.38 UNIT C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time IS ISM VSD trr Qrr IRRM MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 13 Ab VDS = 50 V, ID = 13 A VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V, VDS = 0 V to 480 Vc 600 3.0 11 - 420 0.27 4000 340 29 170 130 0.63 20 58 33 10 5.0 100 50 2.0 0.32 150 46 64 - V mV/C V nA A mA S pF VGS = 10 V ID = 21 A, VDS = 480 V see fig. 7 and 15b - nC f = 1 MHz, open drain VDD = 300 V, ID = 21 A, RG = 1.3 , VGS = 10 V, see fig. 11a and 11bb - ns - 160 400 480 1540 5.3 21 A 84 1.5 240 610 730 2310 7.9 V ns G S TJ = 25 C, IS = 21 A, VGS = 0 Vb TJ = 25 C, IF = 21 A TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IF = 21 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C Body Diode Reverse Recovery Charge Reverse Recovery Time nC A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91206 S-81273-Rev. B, 16-Jun-08 IRFP21N60L, SiHFP21N60L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1000 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current ( ) 100 100 10 BOTTOM T J = 150C 10 1 1 0.1 T J = 25C 0.1 5.5V 0.01 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 1000 0.01 4 6 8 VDS = 50V 20s PULSE WIDTH 10 12 14 16 VDS, Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 TOP 3.0 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V ID = 21A 2.5 VGS = 10V 2.0 1 5.5V (Normalized) 1.5 1.0 0.1 20s PULSE WIDTH Tj = 150C 0.01 0.1 1 10 100 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) T J , Junction Temperature (C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 3 IRFP21N60L, SiHFP21N60L Vishay Siliconix 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd 10000 Coss = Cds + Cgd 12.0 ID= 21A VGS , Gate-to-Source Voltage (V) 10.0 VDS= 480V VDS= 300V VDS= 120V C, Capacitance(pF) Ciss 1000 8.0 6.0 Coss 4.0 100 Crss 2.0 10 1 10 100 1000 0.0 0 20 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 100.00 20 ISD, Reverse Drain Current (A) T J = 150C 10.00 Energy (J) 15 10 1.00 T J = 25C 5 VGS = 0V 0 0 100 200 300 400 500 600 700 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS Fig. 8 - Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 91206 S-81273-Rev. B, 16-Jun-08 IRFP21N60L, SiHFP21N60L Vishay Siliconix 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) VGS RG RD VDS D.U.T. + - VDD 10 V Pulse width 1 s Duty factor 0.1 % ID, Drain-to-Source Current (A) 100 10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area 25 VDS 90 % 10msec Fig. 11a - Switching Time Test Circuit 20 ID, Drain Current (A) 10 % VGS td(on) tr td(off) tf 15 10 Fig. 11b - Switching Time Waveforms 5 0 25 50 75 100 125 150 T C , Case Temperature (C) Fig. 10 - Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 P DM t1 0.001 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C J = P DM x Z thJC 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 5 IRFP21N60L, SiHFP21N60L Vishay Siliconix 5.0 VDS tp VGS(th) Gate threshold Voltage (V) 4.0 ID = 250A 3.0 IAS Fig. 14c - Unclamped Inductive Waveforms 2.0 Current regulator Same type as D.U.T. 1.0 -75 -50 -25 0 25 50 75 100 125 150 12 V 50 k 0.2 F 0.3 F T J , Temperature ( C ) Fig. 13 - Threshold Voltage vs. Temperature VGS D.U.T. + - VDS 800 EAS , Single Pulse Avalanche Energy (mJ) 700 600 500 400 300 200 ID 9.4A 13A BOTTOM 21A TOP 3 mA IG ID Current sampling resistors Fig. 15a - Gate Charge Test Circuit VGS 100 QG QGS 0 25 50 75 100 125 150 QGD VG Starting T J , Junction Temperature (C) Fig. 14a - Maximum Avalanche Energy vs. Drain Current Charge Fig. 15b - Basic Gate Charge Waveform 15 V VDS L Driver RG 20 V tp D.U.T IAS 0.01 + A - VDD A Fig. 14b - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91206 S-81273-Rev. B, 16-Jun-08 IRFP21N60L, SiHFP21N60L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 16 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91206. Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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